c轴择优取向ZnO薄膜RF溅射工艺研究  

Deposition Condition Investigation of High c-axis Preferred Orientation ZnO Films Produced by RF Magnetron Sputtering

作　　者：陈祝[1] 张树人[2] 杜善义[3] 杨成韬[2] 陈富贵[2] 董加和[2] 孙明霞[2] 

机构地区：[1]成都信息工程学院通信工程系,四川成都610225 [2]电子科技大学微电子与固体电子学院,四川成都610054 [3]哈尔滨工业大学复合材料研究所,黑龙江哈尔滨150001

出　　处：《压电与声光》2007年第3期318-320,323,共4页Piezoelectrics & Acoustooptics

基　　金：国家重点基础研究专项"九七三"基金资助项目(No.5130Z02)

摘　　要：通过射频磁控溅射在Si(100)基片上制备了ZnO薄膜,该文着重研究了磁控溅射中各生长参数如衬底温度、氧分压及后处理工艺等因素对氧化锌薄膜结晶性能、表面形貌、择优取向与微结构的影响,并对溅射工艺与取向、结构的关系进行了分析比较,从而确定了最佳溅射及后处理条件并获得了c轴择优取向的ZnO薄膜。The zinc oxide （ZnO） thin films were deposited on Si （100） substrate by RF magnetron sputtering technique from a ZnO ceramic target. This paper discussed the relationship of microstructure, surface morphology and preferred orientation with the deposition parameters, such as substrate temperature, oxygen partial pressure, and final annealing treatment,etc. It was found that the preferred orientation and microstructure of ZnO films were strongly affected by the sputtering and annealing condition. The optimum conditions of RF sputtering were also studied in detail. Based on the conditions obtained, an excellent ZnO films with high c-axis orientation has been realized.

关 键 词：氧化锌薄膜 磁控溅射 氧分压 择优取向 

分 类 号：N304.2[自然科学总论] O484.1[理学—固体物理]