金刚石膜的氮掺杂行为  

Nitrogen-doped diamond film and its doping behavior

作　　者：李明吉[1] 吕宪义[1] 孙宝茹[1] 李春燕[1] 李博[1] 金曾孙[1] 

机构地区：[1]吉林大学超硬材料国家重点实验室,吉林长春130012

出　　处：《新型炭材料》2007年第2期183-187,共5页New Carbon Materials

基　　金：国家863新材料领域研究资助项目~~

摘　　要：采用电子辅助化学气相沉积法(EA-CVD)制备了氮掺杂金刚石膜,用SEM、Raman光谱、XPS、EPR等测试手段研究了金刚石薄膜的品质和膜中的氮杂质状态。结果表明,随着氮气流量的增加,金刚石膜的形貌从完整的晶面逐渐变为与(100)面共存的“菜花状”,且非晶碳的含量增加,品质下降。金刚石膜中氮以Ns0、[N—V]0和[N—V]-1的形式存在,在较低氮气流量下[N—V]0和[N—V]-1的含量较多,Ns0氮杂质的质量分数在1.50×10-5～4.83×10-4之间变化。Nitrogen-doped diamond films were synthesized by electron assisted chemical vapor deposition. The quality and chemical state of nitrogen in the diamond films were characterized by SEM, Raman, XPS, and EPR. Results showed that the morphologies of the diamond films changed from integrated facets to the ＂cauliflowerlike＂ diamond （100） faces, the amorphous carbon content increased and its quality dropped with increasing nitrogen flow rate. The chemical state of nitrogen in the diamond films was of the form Ns^0, [ N-V ]^0 and [ N-V]^-1 The amounts of [ N-V]^0 and [ N-V] ^-1 were higher when the nitrogen flow rate was lower, and the mass fraction of Ns^0 varied from 1.50 × 10^-5 to 4.83 × 10^-4

关 键 词：金刚石膜 EA-CVD方法 膜品质 氮杂质 

分 类 号：TQ164[化学工程—高温制品工业]