一种噪声系数为1.4dB的S波段MMIC低噪声放大器  

1.4 dB Noise Figure S-Band MMIC Low Noise Amplifier

作　　者：黄华[1] 张海英[1] 杨浩[1] 尹军舰[1] 叶甜春[1] 

机构地区：[1]中国科学院微电子研究所,北京100029

出　　处：《电子器件》2007年第3期808-810,814,共4页Chinese Journal of Electron Devices

基　　金：国家自然科学基金项目资助(60276021);国家重点基础研究规划资助项目(G2002CB311901)

摘　　要：报道了一种可直接应用于无线接收系统前端的具有较低噪声系数和较高相关增益的MMIC低噪声放大器,该低噪声放大器采用0.50μm GaAs PHEMT工艺技术制作.电路设计采用两级级联结构,为减小电路面积采用集总参数元件匹配电路,并用ADS软件仿真无源元件寄生效应.电路测试结果表明:在2.8～3.5GHz频段内噪声系数低于1.4dB,同时相关增益大于25dB,增益平坦度小于0.5dB,输入输出反射损耗小于-10dB.The paper presents a MMIC low noise amplifier with low noise figure and high associate gain which can be used in wireless receiver end directly. The amplifier was fabricated using a standard 0. 50 μm GaAs PHEMT technology. The two stage monolithic circuit employs lumped elements for the matching circuit to reduce the chip size. To consider parasitic effects, the circuit simulation is achieved by using ADS software. The test results demonstrated a maximum noise figure of 1.4 dB, an associated gain of more than 25 dB and gain flatness less than 0. 5 dB from 2.8 to 3. 5 GHz.

关 键 词：微波单片集成电路 低噪声放大器 赝配高电子迁移率晶体管 S波段 

分 类 号：TN405[电子电信—微电子学与固体电子学]