新一代纳米级器件物理特性仿真工具——SenTaurus Device  

New Generation Physical Characteristic Simulation Tool of Nano-Level Device-SenTaurus Device

作　　者：张宪敏[1] 李惠军[1] 侯志刚[1] 于英霞[1] 

机构地区：[1]山东大学孟尧微电子研发中心,济南250100

出　　处：《微纳电子技术》2007年第6期299-304,共6页Micronanoelectronic Technology

摘　　要：介绍了Synopsys Inc.新近推出的新一代纳米层次器件物理特性仿真工具——SenTaurus Device的功能特点以及进行器件物理特性仿真的典型流程。重点介绍了为实现nm级器件物理特性的模拟引入的诸多近代器件物理模型。利用SenTaurus Device对基于Sentaurus Process生成的一个90nm NMOS器件进行了器件物理特性仿真,并给出了相应结果。The functional characteristics and typical simulation flow of SenTaurus Device the new generation physical characteristic simulation tool were described, and several recent physical models for the simulation of nano-level device were emphatically introduced. Based on a 90 nm NMOS produced by Sentaurus Process, the simulation was run on Sentaurus Device, and the results of the nano-level device were presented.

关 键 词：集成电路 纳米层次 场效应晶体管 非局域隧穿 小尺寸效应 

分 类 号：TN431.1[电子电信—微电子学与固体电子学]