溅射沉积温度对薄膜生长影响的计算机模拟  

Sputtering deposition temperature-dependent computer simulation of thin film growth

作　　者：李化鹏[1] 孙大智[1] 于春花[1] 陈希明[1] 杨保和[1] 

机构地区：[1]天津理工大学电子信息与通信工程学院,天津300191

出　　处：《天津理工大学学报》2007年第3期21-23,共3页Journal of Tianjin University of Technology

基　　金：天津市自然科学基金重点项目(06YFJZJC00100);天津市重点实验室基金(2004ZD01)

摘　　要：利用Monte Carlo方法对薄膜生长过程进行计算机模拟.模型针对粒子的沉积、吸附及粒子的扩散等过程,研究了粒子允许行走的最大步数对薄膜生长形貌的影响.结果表明:随温度升高,粒子行走步数增加,薄膜的生长经历了从分散到分形团聚的过程;在粒子行走步数越小的情况下,薄膜越易趋向于分散生长.The growth of thin films was simulated by Monte Carlo method. The processes of particle deposition, adatom diffusion were taken into account in our model. The effects of the maximum steps that a particle was permitted to migrate on the morphology of thin films were investigated. The results show that the films growth undergoes disperse, fractal and conglohating, with the increase of particles migrating steps by increase the temperature. In addition, the less the particles migrating steps, the more easily the particles tend to he in disperse growth.

关 键 词：MONTE CARLO方法 计算机模拟 薄膜生长 分形 

分 类 号：O484[理学—固体物理]