248 nm KrF准分子激光零级抑制石英相位掩模器的研制  

Fabrication of Zero order Nulled Silica Phase Masks for 248 nm KrF Excimer Laser

作　　者：陈根祥[1,2] 程美乔[1,2] 葛璜 简水生[1,2] 王圩[1,2] 

机构地区：[1]北方交通大学光波技术研究所 [2]中国科学院半导体所国家光电子工艺中心

出　　处：《中国激光》1997年第7期623-626,共4页Chinese Journal of Lasers

基　　金：国家自然科学基金;863计划;国家博士点基金

摘　　要：实验研制了针对波长２４８ｎｍＫｒＦ准分子激光的零级抑制石英相位掩模器。用双层掩蔽和图形转移技术，在双面抛光的石英基片上以ＣＨＦ３／Ｏ２为反应气体，用反应离子刻蚀技术制作了具有良好完整性、周期１．０８５μｍ的石英相位掩模器。实际测量表明其零级衍射效率被抑制到５．９７％。A method for fabricating zero order nulled silica grating phase masks for 248 nm KrF excimer laser is described. Perfect silica mask gratings with the period of 1.085 μm have been produced using bilayer resist and proper techniques for pattern transfer. Exprimental measurements show that the zero order diffraction efficience is less than 6%. Etch of silica substrates is performed by reactive ion etching in CHF 3/O 2. Theoretical analysis shows that these phase masks can be used for producing grating pattern by self interference and for fabricating UV written fiber Bragg gratings.

关 键 词：相位掩膜 反应离子刻蚀 光栅 激光技术 

分 类 号：TN24[电子电信—物理电子学] TN305.7