多孔硅深能级谱的测试  

The Measurement of the Deep Level Transient Spectroscopy of Porous Silicon

作　　者：晁战云[1] 唐洁影[1] 汪开源[1] 

机构地区：[1]东南大学电子工程系,南京210096

出　　处：《固体电子学研究与进展》1997年第2期178-183,共6页Research & Progress of SSE

摘　　要：测试了几种不同条件下制备的多孔硅样品的深能级谱（DLTS）。结果发现，其深能级都处于禁带深处，其位置和相对浓度随样品不同而不同。对测得的谱线进行了计算和分析，并联系多孔挂的表面状态作了分析和讨论。The deep level transient spectroscopy(DLTS) of porous silicon (PS) is measured under several conditions. The results indicate that the deep levels of the PS are all situated in the depth of forbidden band and the place and relative density of the deep levels in different samples are different from each other. Analysis and discussion are carried out involving the surface states of the PS.

关 键 词：多孔硅 深能级谱 表面态 半导能带结构 

分 类 号：TN304.12[电子电信—物理电子学] O471.5[理学—半导体物理]