工艺参数对非平衡磁控溅射Ti/TiN/Ti(C,N)薄膜硬度的影响  

Influence of Processing Parameters on Hardness of Ti/TiN/Ti(C,N) Films Deposited by Unbalanced Magnetron Sputtering Technology

作　　者：张以忱[1] 吴宇峰[1] 巴德纯[1] 马胜歌 

机构地区：[1]东北大学机械工程与自动化学院,辽宁沈阳110004 [2]深圳国家863计划材料表面工程技术研究开发中心,广东深圳518029

出　　处：《钢铁研究学报》2007年第7期50-53,共4页Journal of Iron and Steel Research

基　　金：国家高新技术863计划资助项目(2001AA338010)

摘　　要：采用中频非平衡磁控溅射工艺,在316L不锈钢、高速钢和硬质合金3种基体材料上制备Ti/TiN/Ti(C,N)膜系的硬质薄膜。通过改变工作气氛、基体负偏压等工艺参数,对制备薄膜的硬度进行检测分析,结果表明:在Ti(C,N)薄膜的制备中,工作气氛和基体负偏压是影响薄膜硬度的主要因素。当工作气体的通入比例C2H2/(N2+Ar)<1/9时,薄膜硬度较高。当通入的乙炔(C2H2)流量增加时,会明显降低薄膜硬度。当基体负偏压在一定范围内增加时,薄膜硬度随之逐渐提高;当负偏压增加到200 V时,薄膜硬度最大;负偏压超过200 V,薄膜硬度明显下降。基体材料对薄膜硬度的影响较大,在不同基体材料上镀制同一种硬质薄膜时,薄膜硬度不同;3种基体材料上沉积薄膜的硬度数316L不锈钢基体上的薄膜硬度最低。Using MF unbalanced magnetron sputtering technology, Ti/TiN/Ti（C, N） hard films are deposited on different substrates like 316L stainless steel, high-speed steel and cemented carbide by changing working ambience, substrate negative voltage, and so on. Experimental results show that working ambience and bias voltage are major influencing factors on films＇ hardness. When the working gases flux ratio of C2 H2/（N2＋At） is less than 1/9, the hardness of films is relatively high, while with the increase of C2 H2 flux, the hardness of films decreases obviously. When the substrate negative bias voltage increases in a certain range, the hardness of films increases gradually and reaches the highest value when the voltage is increased to 200 V. But when substrate bias voltage is greater than 200 V, hardness of films decreases evidently. The substrate material also has great influence on films＇ hardness, the testing hardness on different substrate is different, hardness of films on 316L stainless steel is Iess than that on high-speed steel and cemented carbide.

关 键 词：非平衡磁控溅射 Ti(C  N)薄膜 薄膜硬度 基体负偏压 

分 类 号：TG174.444[金属学及工艺—金属表面处理]