在钛酸锶衬底上外延生长ZnO薄膜及其性能研究  

Growth and Properties of ZnO Thin Film on(111)SrTiO_3

作　　者：杨锡林[1] 张连翰[1] 邹军[1] 何晓明[1] 宋词[1] 周圣明[1] 杭寅[1] 

机构地区：[1]中国科学院上海光学精密机械研究所,上海201800

出　　处：《人工晶体学报》2007年第1期106-109,共4页Journal of Synthetic Crystals

基　　金：国家自然科学基金项目(No.60478023);国家自然科学重点基金(No.50532100)

摘　　要：用脉冲激光淀积法(PLD)在(111)面SrTiO3衬底上外延生长ZnO单晶薄膜。样品分别在衬底温度为350℃、500℃、600℃下外延生长。X射线衍射(XRD)的结果表明,所得的ZnO单晶薄膜结晶性能好,只出现(002)和(004)两个衍射峰,(002)峰的半高宽度(FWHM)为0.23°。在荧光光谱中我们只观察到来源于带边激子跃迁的强UV发射,并且随着生长温度的升高,紫外峰的强度逐渐增强。样品的SEM图像表明所得ZnO薄膜表面平整,晶粒均匀。衬底温度为600℃时,所得到的ZnO薄膜结构完整,晶粒尺寸最大,均匀;而且紫外发射最强。Structures and optical properties of ZnO thin films grown on （ 111 ） SrTiO3 substrates by pulsed laser dopsition method （PLD） were investigated, c-axis oriented ZnO film was grown on （ 111 ） SrTiO3 substrate at the substrate temperature of 350℃, 500℃, 600℃. The results of XRD show that ZnO thin films ,with 0.23° of FWHM, is c-axis oriented. The emission spectra were observed at room temperature. No peaks were perceived in PL spectra except for one peak at 378nm derived from band-edge exciton transition. The intensity of peak improved gradually with the rise of substrates temperature. The quality of ZnO thin films we got is the best when temperature of substrate was 600°.

关 键 词：PLD 紫外发射 ZNO薄膜 SRTIO3 

分 类 号：O484[理学—固体物理]