硼掺杂对μc-Si:H薄膜微结构和光电性能的影响  

Influence of Boron Doping on Microstructure and Optoelectronic Properties of μc-Si:H Film

作　　者：汪昌州[1] 杨仕娥[1] 陈永生[1] 杨根[1] 郜小勇[1] 卢景霄[1] 

机构地区：[1]郑州大学物理工程学院材料物理教育部重点实验室,郑州450052

出　　处：《人工晶体学报》2007年第1期123-128,共6页Journal of Synthetic Crystals

基　　金：河南省科技攻关项目(No.0424210016)

摘　　要：采用射频等离子增强化学气相沉积(RF-PECVD)法制备了掺硼氢化微晶硅(μc-Si:H)薄膜,研究了硼掺杂对薄膜的结晶状况、沉积速率、暗电导率和光学带隙的影响。拉曼光谱、扫描电子显微镜、分光光度计和电导率测试结果表明:当掺硼比(B2H6/SiH4)由0.1%增加到0.75%时,硅膜的晶化率逐渐降低,并由微晶向非晶过渡;沉积速率随掺硼比的增加线性增大;暗电导率先升高后下降,当掺硼比为0.5%时,暗电导率最大;光学带隙随掺硼比的增加逐渐减小。Boron-doped hydrogenated microcrystalline silicon （μc-Si： H） thin films were prepared by using radio-frequency plasma-enhanced chemical vapor deposition （RF-PECVD） method. The effect of boron doping on the crystalline volume fraction, deposition rate, dark conductivity and optical band gap of the films were investigated by means of Raman spectrophotometer, scanning electron microscopy （SEM）, spectrometer and conductivity measurements. The results show that the crystalline volume fraction of films decreases gradually, and films change from microcrystalline silicon to amorphous silicon when diborane gas phase doping percentage to silane increase from 0.1% to 0.75%. The deposition rate approximately increases in linearity. The dark conductivity of films increases until the doping percentage reaches 0.5% and then decreases. The optical band gap reduces with the increase of doping percentage.

关 键 词：p型氢化微晶硅薄膜 掺硼比 晶化率 电导率 

分 类 号：O484[理学—固体物理] TN304[理学—物理]