GaN激子跃迁的时间分辨光谱学研究  

Time Resolved Photoluminescence Spectroscopy of GaN Excitonic Transitions

作　　者：陈光德[1] 林景瑜[2,3] 江红星[2,3] 

机构地区：[1]西安交通大学应用物理系 [2]堪萨斯州立大学物理系 [3]明尼苏达APA光学公司

出　　处：《光学学报》1997年第6期723-726,共4页Acta Optica Sinica

摘　　要：用时间分辨光谱学方法研究低压有机金属化学汽相沉积生长的ＧａＮ中自由、束缚激子（ＢＸ）的跃迁，讨论了这些跃迁的光致发光光谱、复合寿命及其与温度的关系，给出了中性施主束缚激子和自由激子（ＦＸ）的辐射复合寿命分别为０．１２ｎｓ和０．Time resolved photoluminescence spectroscopy has been used to study the dynamics of the free and donor bound exciton transitions in GaN epitaxial layers grown by metal organic chemical vapor deposition (MOCVD). Luminescence spectra, recombination lifetimes of these transitions as well as their temperature dependencies have been measured, from which the radiative recombination lifetimes of about 0.12 ns for the neutral donor bound excitons and of about 0.4 ns for the free excitons have been obtained. The observed high radiative recombination rates of these transitions imply superior optical properties of the GaN, which promise many important optical device applications including efficient and fast UV blue lasers based on GaN.

关 键 词：激子跃迁 时间分辨光谱学 氮化镓 半导体 

分 类 号：O471.3[理学—半导体物理]