双δ掺杂In_(0.65)Ga_(0.35)As/In_(0.52)Al_(0.48)As赝型高迁移率晶体管材料子带电子特性研究  

Observations on subband electron properties in In_(0.65)Ga_(0.35)As/In_(0.52)Al_(0.48)As MM-HEMT with Si δ-doped on the barriers

作　　者：周文政[1] 林铁[1] 商丽燕[1] 黄志明[1] 朱博[1] 崔利杰[2] 高宏玲[2] 李东临[2] 郭少令[1] 桂永胜[1] 褚君浩[1] 

机构地区：[1]中国科学院上海技术物理研究所红外物理国家重点实验室 [2]中国科学院半导体研究所,北京100083

出　　处：《物理学报》2007年第7期4143-4147,共5页Acta Physica Sinica

基　　金：国家重点基础研究发展规划项目(批准号:001CB309506);国家自然科学基金(批准号:60221502;10374094)资助的课题.~~

摘　　要：研究了基于InP基的In0.65Ga0.35As/In0.52Al0.48As赝型高迁移率晶体管材料中纵向磁电阻的Shubnikov-deHaas(SdH)振荡效应和霍耳效应,通过对纵向磁电阻SdH振荡的快速傅里叶变换分析,获得了各子带电子的浓度,并因此求得了各子带能级相对于费米能级的位置.联立求解Schrdinger方程和Poisson方程,自洽计算了样品的导带形状、载流子浓度分布以及各子带能级和费米能级位置.理论计算和实验结果很好符合.实验和理论计算均表明,势垒层的掺杂电子几乎全部转移到了量子阱中,转移率在95%以上.Magneto-transport measurements have been carried out on a Si δ-doped In0.65Ga0.35As/In0.52Al0.48Asmetamorphic highelectron-mobility transistor with InP substrate in a temperature range between 1.5 and 60 K under magnetic field up to 13 T. We studied the Shubnikov-de Haas（SdH） effect and the Hall effect for the δ single quantum well occupied by two subbands and obtained the electron concentration and energy levels respectively. We solve the Schrodinger- Kohn-Sham equation in conjunction with the Poisson equation self-consistently and obtain the configuration of conduction band, the distribution of carriers concentration, the energy level of every subband and the Fermi energy. The calculational results are well consistent with the results of experiments. Both experimental and calculational results indicate that almost all of the δ-doped electrons transfer into the quantum well in the temperature range between 1.5 and 60 K.

关 键 词：SdH振荡 二维电子气 FFT分析 自洽计算 

分 类 号：TN32[电子电信—物理电子学]