热蒸发分解法制备多晶氧化锌薄膜以及性能分析  

Growth and Characterization of Undoped Polycrystalline ZnO Films

作　　者：王云涛[1] 张昕[1] 顾小宝[1] 吴晓京[1] 

机构地区：[1]复旦大学材料科学系,上海200433

出　　处：《复旦学报（自然科学版）》2007年第1期65-69,75,共6页Journal of Fudan University：Natural Science

摘　　要：以Zn(CH3COO)2·2H2O为蒸发源,利用热蒸发分解法在Si衬底上沉积了多晶ZnO薄膜.使用多种分析测试手段(XRD,SEM,PL,霍尔效应)对不同的衬底温度下得到的ZnO薄膜的物理性质及结构特征进行分析表征.ZnO薄膜为六角纤锌矿结构,但在高角度时可以观察到衍射峰的分裂,表明ZnO薄膜中结构的非均一性.所得到的ZnO薄膜在蓝光波段具有强烈的受激发射.霍尔效应测量显示在衬底温度低于480℃时,薄膜为空穴导电(p-type),而高于480℃时,为电子导电(n-type).在不同衬底温度下,薄膜表面具有不同形貌特征.还探讨了对于ZnO薄膜的热蒸发分解法的成膜机理.A series of undoped ZnO polycrystalline films were grown on Si substrates by thermal deoomposition method with Zn（CH3COO）2·2H2O as source at different substrate temperatures. The films prepared were characterized by XRD, SEM,PL and Hall Effect measurement. The XRD results revealed wurtzite type structure of the ZnO films. However, splitting of diffraction peak was observed at high angle, indicating the structure of the films is not uniform. The PL spectra of the film showed strong emission in the blue light band. Hall measurement revealed p-type of the films at lower deposition temperature（〈480℃ ）, while at higher temperature（≥480℃）, it changes into n-type. SEM measurements showed the dependence of the film morphology on the substrate temperature. Base on these results, the technology and mechanism about thermal decomposition method are analyzed.

关 键 词：材料科学 ZNO薄膜 P型半导体 热蒸发分解 

分 类 号：O484[理学—固体物理]