反应离子刻蚀剥层的微分霍耳法表征超浅pn结  

Differential Hall Profiling of Ultra-Shallow Junctions Formed by Plasma Doping and Ion Implantation

作　　者：武慧珍[1] 茹国平[1] 黄魏[1] 蒋玉龙[1] 屈新萍[1] 李炳宗[1] 

机构地区：[1]复旦大学微电子学系,上海200433

出　　处：《复旦学报（自然科学版）》2007年第1期81-84,共4页Journal of Fudan University：Natural Science

摘　　要：用反应离子刻蚀(RIE)剥层的微分霍耳法(DHE)对等离子体掺杂、离子注入制备的Si超浅p+n结进行了电学表征.通过对超浅p+n结样品RIE剥层的DHE测试和二次离子质谱(SIMS)测试及比较,发现用反应离子刻蚀(RIE)剥层的DHE测试获得的杂质浓度分布及结深与SIMS测试结果具有良好的一致性,DHE具有良好的可控性与重复性.测试杂质浓度达1021cm-3量级的Si超浅结样品,其深度分辨率可达nm量级.Differential Hall effect（DHE） characterization has been carried out on ultra-shallow p ＋n junctions fabricated by plasma doping and ion implantation. Low-power reaction ion etching（RIE） has been employed for the ultra-thin Si layer stripping. The depth resolution can be as high as up to nanometer level. Reproducible DHE results have been obtained by the controllable profiling technique. Carrier concentration profiles obtained by DHE are in good agreement with those obtained by electrochemieal capacitance-voltage measurements, and comparable with the dopant profile obtained by secondaryion mass spectrometry. The results indicate that DHE combined with RIE stripping is capable of characterizing ultra-shallow pn junctions with junction depth down to 30 nm, and cartier concentration up to 10^20 cm^-3.

关 键 词：半导体电学表征 微分霍耳 超浅结 载流子浓度 载流子迁移率 

分 类 号：TN304.07[电子电信—物理电子学]