聚焦离子束无掩膜注入单晶硅离子浓度深度分布的研究  

Investigation of Ion Depth Profile in Silicon Implanted by Focused Ion Beam

作　　者：王蓓[1] 陈忠浩[1] 陆海纬[1] 宋云[1] 曹永明[1] 曾韡[1] 

机构地区：[1]复旦大学材料科学系,上海200433

出　　处：《复旦学报（自然科学版）》2007年第1期96-99,105,共5页Journal of Fudan University：Natural Science

摘　　要：随着聚焦离子束(focusedion beam,FIB)无掩膜微细加工能力的迅速发展,结合精确定位能力,FIB已成为新型且出色的纳米制造工具.对FIB无掩膜注入单晶硅衬底的注入效果与离子束流、注入剂量的关系进行研究发现,以固定能量注入的离子,当注入剂量恒定,离子浓度随深度的分布与离子束流大小无关;当离子束流恒定,注入离子的表面浓度随注入剂量的增加而增加,但是由于FIB注入的同时会刻蚀材料表面,注入剂量达到饱和值后,会造成材料一定程度的减薄.Recently, becsuse of its rapid development as a maskless process and providing great flexibility and simplicity, FIB is regarded as one of the most distinct and promising techniques for nanofabrication. Characterization of depth profile of gallium ion masklessly implanted by FIB of different ion beam currents and dose has been investigated in this paper. For given ion energy and dose, depth profile is independent of ion current; while, for given ion current, surface concentration increases with ion dose before saturation is reached. However, because FIB will inevitably etch material surface during maskless implantation, saturated dose results in some reduction of the thickness of material.

关 键 词：聚焦离子束 无掩膜离子注入 溅射 刻蚀 离子束流 饱和剂量 

分 类 号：TN304.07[电子电信—物理电子学] TN305.3