BSIT电导调制区的收缩和偶极区的形成  

Shrinkage of Conductivity-modulation Region and Formation of Dipole Domain in Bipolar-mode Static Induction Transistor

作　　者：杨建红[1] 汪再兴[1] 张辉[1] 闫锐[1] 

机构地区：[1]兰州大学,甘肃兰州730000

出　　处：《电力电子技术》2007年第7期98-100,共3页Power Electronics

摘　　要：对大注入情况下的双极型静电感应晶体管(Bipolar Static Induction Transistor,简称BSIT)的特性作了数值分析。器件尺寸为15000nm×200000nm。分析结果表明,当栅源电压大于0.5V时,在适当的漏源电压下,漏电流就会达到饱和。在大注入情况下,漂移区出现电导调制区(Conductivity-modulation Region,简称CMR),漏源电压很小时,就会导致漏电流的剧增。漏电流的饱和与CMR的收缩有关,漏源电压的增加导致CMR的收缩。在CMR收缩时形成了偶极区,该区域是中性区,其空间大小及其中的电场与漏电压呈线性比例关系。这一关系将导致饱和电流随漏电压成比例地线性变化。The characteristics of bipolar static induction transistor （BSIT） at high level injection are studied numerically.The device has a cross section of 15000nm×200000nm.The analytical results show that the drain current saturates only when the gate-source bias is larger than 0.5V.At high-level injection,a conductivity-modulation region （CMR） appears in the drift region,which results in the sharp increase of at small drain biases.The shrinkage of the CMR is responsible for the saturation of the drain current.The CMR shrinks as a result of the increasing drain biases.A new phenomenon,that a dipole domain appears upon the shrinkage of the CMR,is found and studied.There is a charge-neutral area within the domain, its size and electric field are vary proportionally with the applied drain bias.The linear variation of the electric field in the domain is responsible for the slight linear-increment of drain current in saturation regime.

关 键 词：晶体管 电学性能/偶极区 电导调制 双极型晶体管 

分 类 号：TN386.7[电子电信—物理电子学]