准静态C-V法测量硅表面态密度分布及数据处理  

Determination of the Surface-State Distribution of Si Based on Quasi-Static C-V Test and Its Data Processing

作　　者：钱敏[1] 刘蓓[1] 辛煜[2] 

机构地区：[1]苏州大学电子信息学院微电子系 [2]苏州大学物理科学与技术学院

出　　处：《半导体技术》2007年第7期577-580,共4页Semiconductor Technology

摘　　要：表面态问题的研究是半导体材料、器件以及集成电路工艺等研究中的一个重要议题,对表面态在禁带中的分布规律进行了研究。采用微波电子回旋共振等离子体化学气相沉积(ECR-CVD)方法在p型硅衬底上沉积了低介电常数绝缘介质的MOS结构;对该样品进行了高频和准静态C-V测试;在给出表面态分析计算的原理基础上,用C语言编写数值积分程序对所采集数据进行了数据处理分析,计算得到了表面态密度分布情况,给出了分布曲线。结果表明,该样品p-Si材料的禁带中表面态存在比较广的连续分布,在靠近价带一侧呈现两个峰值。The surface state issue plays an important role in studying on the semiconductor materials, devices and integrated circuits. The distribution state of the surface state within the forbidden-band was studied. The MOS structure was prepared with low-k dielectric-constant material of insulator layer. The dielectric layer was deposited by microwave electron cyclotron resonance plasma chemical vapor deposition method （ECR-CVD）. C-V test was processed at high frequency and quasi-static state. The principle of determining surface-state was given out. The digital integral calculus program was written with C language to process the acquired data and obtain the distribution of surface-state. The result demonstrates that the surface- states are widely distributed in the band-gap with two peaks at Ev side as can be seen on listed figure.

关 键 词：C-V测试 表面态分布 数据处理 数值积分 

分 类 号：TN104.3[电子电信—物理电子学]