RFID中嵌入式EEPROM的超低功耗设计  

Low-Power Design of Embedded EEPROM Memory for RFID Tag IC

作　　者：张帆[1] 邹雪城[1] 刘冬生[1] 邓敏[2] 

机构地区：[1]华中科技大学电子系,湖北武汉430074 [2]华中科技大学图像所,湖北武汉430074

出　　处：《微电子学与计算机》2007年第7期169-172,共4页Microelectronics & Computer

摘　　要：基于SMIC 0.35μm嵌入式EEPROM工艺实现了一款256byte的超低功耗EEPROM IP核。典型情况下,读电流为40μA,页编程电流为250μA,特别适合RFID(Radio Frequency Identification)标签芯片的应用。针对芯片中各种功耗的来源进行了详细的分析,并给出了相应的实现方法。A 256 byte ultra-low-power EEPROM IP core which is based on SMIC 0.35μm embedded EEPORM process has been given in this paper. A 40pdk typical read current and 250μA programming current are achieved, so the EEPROM IP core is perfectly proper for RFID （Radio Frequency Identification） tag IC. Detailed analysis on the souses of main costs and the relevant low-power design methods are presented.

关 键 词：EEPROM RFID标签芯片 灵敏放大器 电荷泵 低功耗 

分 类 号：TN402[电子电信—微电子学与固体电子学]