纤锌矿n-GaN室温补偿度解析模型  

Analytic Models for Compensation Ratio of Wurtzite n-GaN at Room Temperature

作　　者：何菊生[1] 张萌[1] 许彪[1] 唐建成[1] 

机构地区：[1]南昌大学材料科学与工程学院,南昌330031

出　　处：《Journal of Semiconductors》2007年第7期1041-1047,共7页半导体学报（英文版）

摘　　要：用数值方法将室温n型GaN补偿度θ表示为Caughey-Thomas解析模型函数.对大多数非故意掺杂样品,该模型值θChin与Chin等人的理论值及普遍采用的变温霍耳测量拟合值比较表明,三者具有较好的一致性.对掺Si样品及有氧或Si污染的非故意掺杂样品,基于Chin理论的补偿度值与普遍采用的实验拟合值常有一定偏差,通过理论计算及数值方法,得到了掺硅GaN补偿度的解析模型函数θSi,在室温载流子浓度3×1016~1018cm-3范围内,该模型值与普遍采用的实验拟合值符合得较好,与基于Chin理论的补偿度θChin也有很好的相容性.该模型对GaN材料分析及器件的计算机模拟、器件仿真有重要意义.Based on Chin＇s theory, which describes the concentration and compensation ratio dependencies of the low-field mobility in gallium nitride in wide concentration ranges （10^16- 10^20 cm^-3） at room temperature, an analytic model for the compensation ratio of unintentionally doped GaN at room temperature has been obtained. Another model for Si-doped GaN has also been obtained by use of theoretical calculations and computational methods. A comparison of these models with the fitting value from experimental results shows that the new analytic models have a good agreement in the electron concentration range of 3 × 10^16 ~10^18cm^-3.

关 键 词：补偿度 GAN 电子迁移率 霍耳迁移率 补偿受主 

分 类 号：TN304[电子电信—物理电子学]