Mn_(0.1)Ti_(0.9)O_(2-δ)稀磁半导体薄膜的MBE生长及表征  

Characterization of Diluted Magnetic Semiconductor Mn_(0.1)Ti_(0.9)O_(2-δ) Thin Film Grown by Molecular Beam Epitaxy

作　　者：夏延秋[1] 吴曙翔[1] 刘雅晶[1] 于晓龙[1] 李树玮[1] 

机构地区：[1]中山大学光电材料与技术国家重点实验室,广州510275

出　　处：《Journal of Semiconductors》2007年第7期1058-1062,共5页半导体学报（英文版）

基　　金：国家自然科学基金(批准号:50572124);广州市科技计划资助项目~~

摘　　要：采用OPA-MBE方法在SrTiO3(STO)衬底上成功制备了Mn0.1Ti0.9O2-δ(MTO)稀磁半导体薄膜.利用X射线衍射仪、X射线光电子能谱仪、紫外可见光分度计以及直流四探针测试仪研究了薄膜的晶体结构、化学组成、光吸收和电荷输运性质.MTO薄膜具有锐钛矿和金红石的混合相,光吸收带边界发生“红移”,电荷输运性质明显提高,室温环境下电阻率仅为37.5Ω.m.Diluted magnetic semiconductor Mn0.1Ti0.902-δ （MTO） thin film was grown successfully on SrTiO3 （STO） substrate by oxygen plasma assisted molecular beam epitaxy （OPA-MBE）. The crystalline structure,chemistry composition,optical absorption,and electrical conductivity properties of the thin film were characterized by X-ray diffraction （XRD） ,X-ray photoelectron spectrometry （XPS）,ultraviolet and visible spectrophotometry （UV-Vis）, and resistivity measuring instruments with a four-probe array. The MTO thin film has anatase and rutile crystal structures, and the absorption edge is shifted to the lower-energy. The electrical conductivity of the MTO thin film is evidently improved, and the resistivity is only 37. 5Ω· m at room temperature.

关 键 词：Mn0.1Ti0.9O2-δ薄膜 稀磁半导体 OPA-MBE X射线光电子能谱 

分 类 号：O484[理学—固体物理]