埋入SiO_2薄膜中纳米Ge的光学、电学性质和室温可见光致发光  

OPTICAL,ELECTRICAL PROPERTIES AND ROOM TEMPERATURE VISIBLE PHOTOLUMINESCENCE FROM Ge NANOCRYSTALS EMBEDDED IN SiO 2 THIN FILMS

作　　者：王印月[1,2] 杨映虎[1,2] 郭永平[1,2] 甘润今 何源[1,2] 薛华 陈光华 

机构地区：[1]兰州大学物理系 [2]北京机械工业学院基础部

出　　处：《物理学报》1997年第1期203-208,共6页Acta Physica Sinica

基　　金：国家自然科学基金;甘肃省自然科学基金

摘　　要：用射频共溅射技术和真空退火方法，制备出埋入ＳｉＯ２基质中纳米Ｇｅ的复合膜（ｎｃＧｅ／ＳｉＯ２），通过喇曼散射、Ｘ射线衍射、室温光致发光（ＰＬ）、紫外可见光近红外吸收及电导温度关系等测量手段，较系统地研究了该复合膜的光学、电学、薄膜结构和光致发光性质，在室温情况下得到了有多个弱峰的、不对称的宽带ＰＬ谱，主峰能量约为２０５ｅＶ。Abstract Germanium nanocrystals embedded in SiO 2 thin films have been prepared on fused silica plates and silicon (100) wafers by RF cosputtering technique and post annealing treatment in vacuum. Using Raman scattering,X ray diffraction,photoluminescence (PL),UV/VIS/NIR transmittance and reflectance spectroscopy,and conduction temperature measurements,we investigate the optical,electrical properties of the Ge SiO 2 composite films as well as their structures and the visible photoluminescence properties.The room temperature broadband PL spectra have been obtained.The emitting energy is approximately 2 05eV.This value agrees with the result determined by quantum confinement effect.

关 键 词：薄膜 纳米锗 二氧化硅 光致发光 

分 类 号：O484.41[理学—固体物理]