氮化铝薄膜的制备及介电性能研究  

Research on Preparation and Dielectric Properties of AlN Films

作　　者：杨克涛[1] 傅仁利[2] 

机构地区：[1]北大先行泰安科技产业有限公司,泰安271000 [2]南京航空航天大学材料学院,南京210016

出　　处：《山东陶瓷》2007年第3期7-13,共7页Shandong Ceramics

摘　　要：采用直流磁控反应溅射的方法在金属铝基板表面沉积AlN薄膜。通过XRD、SEM对绝缘膜层进行了研究分析,并测试了膜层的介电性能。结果表明：在靶基距和溅射功率分别为5cm、150W,衬底温度在室温25℃~300℃内制备的AlN薄膜为六方晶型,沿c轴平行于衬底表面的（100）和（110）晶面生长。AlN薄膜表面有很多蠕虫状形态的晶粒随机地分布在膜平面内,这可能是200℃的衬底温度下AlN薄膜介电性能较好的原因。AIN thin films were prepared on the surfaces of aluminum metal substrates by reactive magnetron sputtering of direct current. Thin films were analyzed by XRD and SEM;dielectric properties were evaluated using high resistance meter. Experimental results show- when the distance between the target and the substrate is 5cm and when a sputtering power of 150W is used under a temperature of the substrate 25℃ ~300℃, the AIN film deposited on the AI substrate has the hexagonal crystal structure; the crystal grow prefers the orientation of the C axis paralell to the （100） and （110） crystal plane of the substrate. There are a lot o{ A1N crystal grain which has a morphology of vermicular distributed randomly in the plane of AIN film surface. This may because of the dielectric properties of the AIN films are better when the temperatrue of the substrate is 200℃.

关 键 词：直流磁控反应溅射 ALN薄膜 介电性能 蠕虫状 

分 类 号：TB43[一般工业技术]