精密U薄膜的制备及表征  

Fabrication and Characterization of Precision U films

作　　者：吕学超[1] 任大鹏[1] 郎定木[1] 黄文莉[1] 姜桂芬[1] 

机构地区：[1]中国工程物理研究院表面物理与化学国家重点实验室,四川绵阳621900

出　　处：《中国材料科技与设备》2007年第4期55-57,共3页Chinese Materials Science Technology & Equipment

摘　　要：采用机械磨抛、表面轮廓仪以及AES分析等方法，制备并表征了精密U薄膜。结果表明，获得了厚度从约50μm深减薄到约10μm厚的U薄膜，该薄膜的表面粗糙度Ra、Rq均低于50nm，但峰谷极差Tir大于100nm。薄膜越薄，Ra，Rq，Tir和厚度不一致性均有所增大，且薄膜的厚度一致性随着取样长度的增加有所减小。对实验结果进行了讨论。Preciosion uranium flims were fabricated by using mechanical polishing （MP）and characterized by means of surface profilometer（SP） and Auger Electron Spectroscopy（AES）. The results show that U films with the range of 50μm to 10 μm in thickness can be obtained. The surface roughness Ra ,Rq of U films are less than 50 nm but the peak to valley Tit are more than 100 nm. As the U films are more thinned, the values of Ra ,Rq ,and Tir are increased ,while the thickness homogeneity is decreased with the increase length of extraction lines. The results were also discussed.

关 键 词：U薄膜 机械减薄 表面粗糙度 

分 类 号：TB43[一般工业技术]