薄膜厚度对ZAO透明导电膜性能的影响  

Thickness Dependence of Properties of ZnO:Al Transparent Conducting Films

作　　者：靳铁良[1] 殷胜东[2] 

机构地区：[1]平顶山学院物理学与电气信息工程学院,河南平顶山467002 [2]重庆师范大学物理学与信息技术学院,重庆400047

出　　处：《内蒙古师范大学学报（自然科学汉文版）》2007年第4期466-469,共4页Journal of Inner Mongolia Normal University(Natural Science Edition)

基　　金：重庆市教委科研基金资助项目(040810)

摘　　要：采用直流反应磁控溅射法,用Al含量为2%的Zn/Al合金靶材,室温下在玻璃衬底上制备了ZAO透明导电薄膜样品.在其他参数不变的情况下,由不同溅射时间得到不同的薄膜厚度,研究了薄膜的结构性质、光学和电学性质随薄膜厚度的变化关系.制备的ZnO:Al薄膜具有(002)面的单一择优取向的多晶六角纤锌矿结构,电阻率为5.1×10-4Ω.cm,平均透射率达到88%.The ZnO：Al films with different thickness were deposited on glass substrates using a DC reactive magnetron sputtering system and the thickness dependence of structural, optical and electrical properties of the ZnO：Al films on glass substrates were studied in detail. Good films with resistivity as low as 5.1×10^-4Ω· cm and 88% transmittance in the visible region on glass were prepared.

关 键 词：直流反应磁控溅射 ZAO薄膜 厚度 光电性能 

分 类 号：O484.4[理学—固体物理]