SBT铁电薄膜及其脉冲准分子激光制备  

SBT Ferroelectric Thin Films Prepared by Pulsed Excimer Laser Deposition

作　　者：杨平雄[1,2] 郑立荣[1,2] 王连卫 林成鲁[1,2] 周宁生 陆怀先[1,2] 

机构地区：[1]中国科学院上海冶金研究所信息功能材料国家重点实验室 [2]南京大学固体微结构国家重点实验室

出　　处：《中国激光》1997年第5期397-400,共4页Chinese Journal of Lasers

摘　　要：采用脉冲准分子激光沉积法在Ｐｔ／Ｔｉ／ＳｉＯ２／Ｓｉ衬底上成功地制备了ＳＢＴ铁电薄膜，发现存在一个最佳沉积衬底温度约为４５０℃。在该温度下沉积的ＳＢＴ薄膜具有较饱和的方形电滞回线，其剩余极化Ｐｒ和矫顽电场Ｅｃ分别为８．４μＣ／ｃｍ２和５７ｋＶ／ｃｍ。The perovskite like SrBi 2Ta 2O 9 thin films have been successfully prepared on Si/SiO 2/Ti/Pt substrate by pulsed eximer laser deposition. The crystallization and ferroelectric property were clearly dependent on the substrate temperature. The SrBi 2Ta 2O 9 thin film with fine grain size and well saturated square hysteresis loop was obtained at 450℃ substrate temperature. Good ferroelectric properties were obtained from the SBT film; P r and E c were 8.4 μC/cm 2 and 57 kV/cm, respectively.

关 键 词：SBT 脉冲激光沉积 铁电薄膜 激光器 

分 类 号：TM221[一般工业技术—材料科学与工程] TN248[电气工程—电工理论与新技术]