N-LDMOS热载流子注入效应的分析和优化  

Hot Carrier Injection Effect Analysis and Optimization for N-LDMOS

作　　者：王文博[1] 宋李梅[1] 王晓慧[1] 杜寰[1] 孙贵鹏 

机构地区：[1]中国科学院微电子研究所,北京100029 [2]HV工艺开发课器件开发课可靠性/失效分析实验室(CSMC),江苏无锡214000

出　　处：《电子器件》2007年第4期1129-1132,共4页Chinese Journal of Electron Devices

基　　金：国家重点基础研究发展计划资助项目(2003CB314705)

摘　　要：研究了一种N-LDMOS器件的热载流子注入效应,分析了热载流子效应产生的机理、对器件性能以及可靠性的影响,提出了改进方法.为了降低此器件的热载流子注入效应,我们利用华润上华公司提供的ISE软件对N-LDMOS高压工艺进行模拟,根据模拟结果调整了器件结构,通过增大器件的场板长度、漂移区长度以及增加N阱与有源区的交叠长度等措施,使得相同偏置条件下,表征热载流子注入强度的物理量——器件衬底电流降为改进前的1/10,显著改善了该器件的热载流子注入效应.HCI（Hot Carrier Injection） effect of N-LDMOS device is studied. Mechanism of how the HCI effect comes into being, effect on the performance and reliability of the device are analyzed and methods to improve HCI effect are proposed. To depress HCI effect, we simulate the N-LDMOS high voltage process with ISA offered by CSMC and adjust device structure according to the simulation result. By lengthening field plate, drift region and N_well overlap on active region, we observe that under the same stress, the substrate current Isub that represents the HCI effect falls to 1/10 of that before optimization. HCI effect is greatly improved.

关 键 词：LDMOS 热载流子注入 可靠性 

分 类 号：TN405[电子电信—微电子学与固体电子学]