溅射制备非晶氮化镓薄膜的光学性能  

Optical Properties of a-GaN Film Deposited by DC Magnetron Sputtering

作　　者：潘孝军[1] 张振兴[1] 贾璐[1] 李晖[1] 谢二庆[1] 

机构地区：[1]兰州大学物理科学与技术学院,兰州730000

出　　处：《无机材料学报》2007年第4期725-728,共4页Journal of Inorganic Materials

基　　金：国家自然科学基金(60176002)

摘　　要：利用直流磁控溅射方法制备了GaN薄膜.X射线衍射及Raman光谱结果表明薄膜样品为非晶结构;傅立叶红外光谱表明薄膜样品的主要吸收峰为Ga-N键的伸缩振动;光致发光测试得到了360nm处的紫外发光谱;测量薄膜样品的紫外-可见谱,并利用Tauc公式计算得到样品的光学带隙为3.74eV,这与光致发光谱得到的结果是一致的.GaN thin films were prepared by direct current （DC） planar magnetron sputtering on Si and SiO2. The films were characterized by X-ray diffraction （XRD）, Raman, Fourier Transform Infrared Spectroscopy （FTIR）, photoluminescence （PL） and UV-Vis spectra. XRD and Raman spectrum show that the films are amorphous. Fourier infrared absorbance spectrum shows that the main absorbance is Ga-N stretching vibration. 360nm ultraviolet emission is obtained at room temperature. UV-Vis result shows that the optical band gap of the films is 3.74eV, which is consistent with photoluminescence spectrum result.

关 键 词：非晶氮化镓 溅射制备 光学性能 

分 类 号：O472[理学—半导体物理] O484[理学—物理]