X射线衍射仪在研究砷化镓缺陷中的应用  

Application of X-ray diffraction on investigation of the defects of gallium arsenide crystal

作　　者：王海云[1] 刘红艳[1] 徐岳生[1] 刘彩池[1] 

机构地区：[1]河北工业大学信息功能材料研究所,天津300130

出　　处：《现代仪器》2007年第4期60-62,共3页Modern Instruments

摘　　要：本文采用X射线衍射仪(XRD),通过异常透射对半绝缘砷化镓(SI-GaAs)的形貌及缺陷进行研究。在没有特殊工艺措施的情况下,LEC法生产的SI-GaAs单晶片的周边区域,都存在有高密度位错的相互作用、割阶和缠绕的产物-胞状结构。X射线形貌技术可以显示SI-GaAs中的高密度位错的结构与分布,从而评估其质量。Without special treatment, the border areas of the semi-insulating gallium arsenide single crystal （SIGaAs） wafer produced by the LEC method usually have cell structures because of the interaction, cutting steps and twine of the high density of dislocation. Using X-ray diffraction technique, the defects of SI-GaAs single crystal were studied by X-ray anomalous transmission topography. The structures and distribution of the high density of dislocations in the SI-GaAs single crystal were analyzed. This method might be used for quality control of SI-GaAs single crystal wafer.

关 键 词：X射线衍射仪 异常透射 小角度晶界 胞状结构 

分 类 号：TH744.15[机械工程—光学工程]