低温多晶硅薄膜制备技术应用进展  

Application progress on the preparation of low temperature polysilicon films

作　　者：杨定宇[1] 蒋孟衡[1] 涂小强[1] 

机构地区：[1]成都信息工程学院光电技术系,四川成都610225

出　　处：《电子元件与材料》2007年第8期8-11,共4页Electronic Components And Materials

基　　金：四川省应用基础研究基金资助项目(04JY029-104)

摘　　要：系统介绍了金属诱导横向晶化法、准分子激光晶化法、触媒化学气相沉积法(Cat-CVD)以及电感耦合等离子体化学气相沉积法(ICP-CVD)制备低温多晶硅薄膜的原理及进展。对不同制备工艺的优势和不足进行了比较,重点讨论了Cat-CVD和ICP-CVD在实用化中需克服的技术问题。对上述制备方法的应用前景作了评述和展望。The principles and progress of LTPS preparation methods including metal induced lateral crystallization （M1LC）, excimer laser annealing （ELA）, catalytic chemical vapor deposition （Cat-CVD） and inductively coupled plasma chemical vapor deposition （ICP-CVD） were systematically introduced. Then, the advantages and shortcomings of different processes were compared with each other. Discussed were several problems of Cat-CVD and ICP-CVD in practical applications. Finally, a brief review and application prospect of above-mentioned methods are also presented.

关 键 词：半导体技术 低温多晶硅薄膜 综述 金属诱导横向晶化 准分子激光晶化 触媒化学气相沉积 电感耦合等离子体化学气相沉积 

分 类 号：TN304.12[电子电信—物理电子学]