基片温度对 Cu-TiC 复合薄膜的影响  

Effect of Substrate Temperature on Cu TiC Composite Films

作　　者：李戈扬[1,2] 王岱峰[1,2] 王公耀 吴亮[1,2] 李鹏兴[1,2] 

机构地区：[1]金属基复合材料国家重点实验室中国科学院 [2]上海硅酸盐研究所

出　　处：《上海交通大学学报》1997年第4期44-48,共5页Journal of Shanghai Jiaotong University

基　　金：华东分析测试中心资助

摘　　要：研究了基片温度对Ｃｕ－ＴｉＣ复合薄膜的影响．Ｃｕ－ＴｉＣ复合薄膜采用多靶磁控溅射仪制备．测定了薄膜的显微硬度及电阻率，并利用ＸＲＤ、ＳＥＭ、ＥＤＡＸ和ＴＥＭ研究了薄膜结构．结果表明，随基片温度的提高，Ｃｕ－ＴｉＣ复合薄膜中ＴｉＣ含量增加，Ｃｕ和ＴｉＣ的晶化逐步完善．特别是薄膜的电阻率受基片温度影响显著，当基片温度为３００℃时薄膜的电阻率达到极小值。Based on the research about the effect of TiC content on the hardness and resistivity of Cu TiC film,the effect of substrate temperature has been studied in this paper.The composite films are deposited by using multi targets magnetron sputtering system,while the microstructure is characterized by means of XRD,SEM,EDAX,and TEM.Then,the microhardness and resistivity are measured.The results show that with the increasing substrate temperature,the TiC contents in composite films expand,and Cu as well as TiC crystallized gradually.The resistivity of films is obviously affected by the substrate temperature and reaches its minimum when the substrate temperature is held at 300℃;meanwhile,the hardness still keeps a higher level.

关 键 词：复合薄膜 磁控溅射 薄膜 铜 碳化钛 基片温度 

分 类 号：O484.1[理学—固体物理]