纳米铜薄膜氧化反应动力学规律研究  

Investigation for Kinetics Law of Oxidation of a Nano-scale Copper Film

作　　者：罗宇峰[1] 钟澄[1] 张莉[1] 严学俭[1] 李劲[1] 蒋益明[1] 

机构地区：[1]复旦大学材料科学系,上海200433

出　　处：《化学学报》2007年第15期1521-1526,共6页Acta Chimica Sinica

基　　金：国家自然科学基金(No.50571027);科技部专项基金(No.2005DKA10400);教育部985微纳电子科技创新平台项目"先进互连材料及概念";上海市科委(Nos.0452nm004;0552nm038);上海-应用材料研究与发展基金(No.0524)资助项目.

摘　　要：研究了140℃下纳米尺度Cu薄膜的氧化行为.采用真空蒸发法以不同沉积速率制备一系列Cu薄膜,利用原子力显微镜(AFM)观察其微观形貌,选取形貌良好的Cu薄膜样品.采用方块电阻和透射光谱两种方法为表征手段,测量16～22nm范围内不同厚度Cu薄膜在140℃下完全氧化所需要的时间,得到了Cu薄膜氧化反应的动力学曲线,并利用X射线衍射(XRD)分析了氧化产物的晶相结构和成分.结果表明,纳米尺度下Cu薄膜在140℃下氧化反应的动力学表征结果满足特殊的反对数生长规律,反应产物为Cu2O.Oxidation behaviour of a nano-scale copper film at 140 ℃ was investigated in this paper. Nano-scale copper films were prepared on glass substrate by vacuum deposition at different depositing rates. Atomic force microscope （AFM） was applied to characterization of the surface morphology of these thin films to choose suitable samples. Kinetics of the oxidation process of the copper films in the thickness range of 16-22 nm at 140 ℃ was studied by using transmission spectrum and sheet resistance methods. The crystal structures and compositions of the oxidation products were analyzed with X-ray diffraction （XRD）. The results show that the copper was oxidized to form Cu2O following a cubic rate law at 140 ℃.

关 键 词：铜薄膜 氧化 动力学表征 方块电阻 透射光谱 

分 类 号：O643.1[理学—物理化学]