微区中MBE共度生长SiGe/Si异质结构的应变和退火效应  

Strain and Annealing Effect of SiGe/Si Heterostructure in Limited Area Grown by MBE

作　　者：杨鸿斌[1] 樊永良[1] 张翔九[1] 

机构地区：[1]复旦大学应用表面物理国家重点实验室,上海200433

出　　处：《Journal of Semiconductors》2007年第8期1226-1231,共6页半导体学报（英文版）

基　　金：国家自然科学基金资助项目(批准号:60376012)~~

摘　　要：报道了在Si衬底上微米尺寸的介质膜窗口中,采用分子束外延技术共度生长的Si0.8Ge0.2薄膜的应变及其退火特性.实验表明,微区生长材料的这些特性,与同一衬底上无边界约束条件下生长的材料相比,有明显的不同.微米尺寸窗口中生长的SiGe/Si材料的应变与窗口尺寸有关,也和窗口的掩膜中的内应力有关.实验还表明,边缘效应对于微区中共度生长的SiGe/Si材料的热稳定性也有显著的影响.在3μm×3μm窗口中共度生长的Si0.8Ge0.2/Si异质结构材料,在950℃高温退火30min后,它的应变弛豫不大于4%.远小于同一衬底上非微区生长材料的应变弛豫.文章还对微区生长材料的这些特性成因进行了探讨.We report results about the strain and annealing effects for a SiGe/Si structure grown in micron-sized windows by MBE. Experiments show that the strain of the SiGe film in the window is significantly different from that of the film grown on an unpatterned area on the same substrate, the former of which depends not only on the size of the window but also on the stress of the mask material of the window. Experiments also show that the edge effects significantly affect the thermal stability of the Si0.8 Ge0.2 film in the window. For Si0.8 Ge0.2 film in a window of 3μm ×3μm,its strain is relaxed by only less than 4% after the sample is annealed at 950℃ for 30rain,which is much less than the strain relaxation of the Si0.8 Ge0.2 film grown on the unpatterned area on the same substrate under the same annealing condition. We discuss the possible reasons for these results.

关 键 词：SIGE 应变 位错 分子束外延 

分 类 号：TN304.054[电子电信—物理电子学]