适用于超深亚微米光刻仿真的建模和优化  

New Modeling and Optimization Method Suitable for UDSM Lithography Simulation

作　　者：沈珊瑚[1] 史峥[1] 谢春蕾[1] 严晓浪[1] 

机构地区：[1]浙江大学超大规模集成电路研究所,杭州310027

出　　处：《Journal of Semiconductors》2007年第8期1320-1324,共5页半导体学报（英文版）

基　　金：国家自然科学基金资助项目(批准号:90207002)~~

摘　　要：提出了一种新颖的利用版图轮廓的超深亚微米光刻工艺建模流程.该流程采用的方法主要包括:首先将代表纯光学模型的传输交叉系数矩阵通过圆极化采样正交投影成更小规模的矩阵,同时用该组相同的极化采样基表示掩模图形;然后用目标电路版图的严格3D仿真结果或其SEM轮廓图对该新系统进行半经验化的校正.在模型校正过程中引入了基于遗传算法的全局优化算法.实验结果显示,该方法能够快速有效地模拟用传统方法不能准确模拟的超深亚微米新出现的一些畸变效应.由于最终的模型是用一批卷积核的形式表示,建成的模型能够满足光学邻近校正对准确性和快速性的要求.This paper presents a novel UDSM lithography process modeling flow using layout contours. The flow mainly includes the following steps. First the transmission cross coefficient matrix standing for the pure optical lithography model is transformed into a much smaller one by circular sampling,while the mask is represented by the same sampling basis;then the resulting system is calibrated half-empirically with the results of a rigorous 3D simulation of the target design layout or the SEM contours. During the model calibration process,novel genetic algorithms are introduced. The experimental results show that the method takes into account new aberration effects,which cannot be simulated well by the traditional method in the UDSM nodes. Due to the fact that the final model is represented using a series of convolution kernels,the constructed model is able to satisfy the speed and accuracy demands of optical proximity correction tasks.

关 键 词：光刻建模 版图轮廓 圆极化采样 遗传算法 光学邻近校正 

分 类 号：TN405[电子电信—微电子学与固体电子学]