HgCdTe的反常高电子迁移率  

ABNORMAL HIGH-ELECTRONIC MOBILITY OF HgCdTe

作　　者：廖仕坤[1] 杨彦[1] 刘新进[1] 

机构地区：[1]昆明物理研究所,昆明650223

出　　处：《红外与激光工程》1997年第3期19-22,共4页Infrared and Laser Engineering

摘　　要：文中报道了碲镉汞的反常高电子迁移率。变磁霍尔测量和小光点扫描红外透射测量结果表明，反常高电子迁移率碲镉汞样品中存在导电非均匀性，这种导电非均匀性是横向组分严重偏析形成的负径向电子浓度梯度（电子浓度从晶片中心向周边减小）造成的。负径向电子浓度梯度的导电非均匀性使HgCdTe电子迁移率的测量值反常地高。This paper presents abnormal high-electronic mobility of HgCdTe. The results of variable magnetism Hall test and infrared transmitting test small spot scan show that the samples of abnormal high-electronic mobility of HgCdTe manifests conducting non-uniformity. This non-uniformity results from electronic concentration gradient in negative radial direction formed by serious segregation of transversely grouped distribution. (the electronic concentration decreases from chip of centre to its periphery) , therefore results in abnormal high-electronic mobility of HgCdTe.

关 键 词：碲镉汞 反常 高电子迁移率 红外光学材料 

分 类 号：TN213[电子电信—物理电子学]