一种集成三轴加速度、压力、温度的硅微传感器  

Monolithic silicon multi-sensor for three-axis accelerometer pressure and temperature

作　　者：徐敬波[1] 赵玉龙[1] 蒋庄德[1] 孙剑[1] 

机构地区：[1]机械制造系统工程国家重点实验室西安交通大学精密工程研究所,西安710049

出　　处：《仪器仪表学报》2007年第8期1393-1398,共6页Chinese Journal of Scientific Instrument

基　　金：国家自然科学基金(50535030;50475085);国家重点基础研究发展规划(2004CB619302);教育部"新世纪优秀人才支持计划"(NCET-05-0842)资助项目

摘　　要：针对恶劣环境和严格空间体积限制条件下的多参数测量问题,利用绝缘体上硅(SOI)材料,采用微型机械电子系统(MEMS)技术,研制了一种可以同时测量三轴加速度、绝对压力、温度参数的单片集成硅微传感器,其中加速度、绝对压力传感器基于掺杂硅压阻效应,温度传感器基于掺杂硅电阻温度效应。结合芯片中各传感器的工作原理,用有限元方法对设计的结构进行了仿真,确定集成传感器的电阻分布和结构参数。根据确定的集成传感器结构,制定了相应的制备工艺步骤。最后给出了集成传感器芯片的性能测试结果。A monolithic silicon multi-sensor for use in harsh environment is presented in this paper. This monolithic multi-sensor is fabricated with SOl wafer, which consists of a three-axis piezoresistive accelerometer, a piezoresistive absolute pressure sensor and a silicon thermistor temperature sensor. The designed structures of the multi-sensor are simulated by FEM （finite-element method）. The simulation results for the multi-sensor are utilized to determine the position of piezoresistor and the size of the structures. The fabricating process of the monolithic multi-sensor is described, which uses bulk-micromachining technology and silicon-on-glass anodic bonding technology. At last the measurement results of the multi-sensor are shown.

关 键 词：集成传感器 SOI MEMS 

分 类 号：TS103.6[轻工技术与工程—纺织工程]