电子封装SiCp/Al复合材料的制备与性能  

Preparation and Properties of SiCp/Al Composite for Electronic Packaging

作　　者：华小珍[1] 邹爱华[1] 周贤良[1] 张建云[1] 饶有海[1] 

机构地区：[1]南昌航空工业学院材料科学与工程系,江西南昌330034

出　　处：《铸造技术》2007年第8期1121-1125,共5页Foundry Technology

基　　金：江西省科技厅;南昌市科技局资助项目;江西省教育厅科技计划项目(赣教技字[2006]167)

摘　　要：研究了无压渗透法制备电子封装SiCp/Al复合材料过程中,烧结工艺对SiC预制件开孔率、抗压强度的影响,以及渗透工艺对Al液渗透形成复合材料的影响,并对所制备的复合材料热物理性能和表面涂覆进行了评价。结果表明,经1 100℃分段烧结的SiC预制件开孔率、抗压强度较好;Al液浇铸温度、保温温度分别在750～850℃、800～900℃的范围时,SiC预制件的渗透效果较好;所制备的55%SiCp/Al复合材料相对密度为98.3%,热膨胀系数在(7.23～9.97)×10-6K-1之间变化,热导率为146.5～172.3 W/(m.K),复合材料表面涂覆性能可行性好。During the preparation of SiCp/AI composite produced by pressureless infiltration technique, the effect of sintering process on open porosity and strength of SiC preform was investigated,and the effect of infiltration process on the AI melt infiltrating into SiCp/AI composite was studied as well, the thermo-physical and coating characteristics of composites were also evaluated. The results show that the open porosity and strength of SiC perform are better adopting the muti-steps sintering in which the maximum temperature can reach 1 100 ℃; and when the pouring temperature and holding temperature for AI melt are in the range of 750～850℃ and 800～900℃ respectively, The better infiltration of AI melt into SiC perform can be obtained; The thermophysical characteristics of SiCp/Al composites with volume fraction of 55% produced by this technique are as follows：the relative density is 98.3, the thermal expansion coefficient is （7.23～10.04）×10-6K^-1, the thermal conductivity is 146.5～172.3W/（m.K）, the plating characteristics of the composite are shown excellent feasibility.

关 键 词：电子封装 SICP/AL复合材料 SiC预制件 无压渗透法 性能 

分 类 号：TB333[一般工业技术—材料科学与工程]