SiC边界层陶瓷电容器的研制  

Study on SiC-Based Grain Boundary Barrier Layer Capacitor

作　　者：秦丹丹[1] 乔建房[1] 邵刚[1] 王海龙[1] 许红亮[1] 卢红霞[1] 张锐[1] 

机构地区：[1]郑州大学,河南郑州450002

出　　处：《稀有金属材料与工程》2007年第A01期442-444,共3页Rare Metal Materials and Engineering

摘　　要：选用α-SiC(4-10μm)作为主晶相,SiO2-CuO作为晶界绝缘层,以两步包裹法制备SiC-SiO2-CuO复合颗粒。干压成型后,在不同温度下常压烧结制得边界层电容器。采用SEM、XRD及密度测试等手段对烧结品进行性能分析。结果发现:1300℃为最佳烧结温度,该温度下最高介电常数(ε)为713100;电容器具有正的介温系数,介电常数在50℃附近急剧增大,而介质损耗(tanδ)在该温度点急剧降低,60℃之后两者均趋于稳定,这可能与界面处产生的空间电荷极化有关;电容器具有强烈的频率色散效应。SiC-SiO2-CuO composites were prepared by two-step coating method, using α-SiC （4-10 μm） as main phase and SiO2-CuO as grain boundary. After dry pressing, the composites were sintered conventionally at different temperatures to get grain boundary barrier layer capacitor （GBBLC）. SEM, XRD and density measurement were used to analyze the compacts. The best temperature was at 1300 ℃. At this temperature, the highest dielectric constant was 713 100. Positive dielectric-temperature coefficient was detected. Dielectric constant increased intensely around 60 ℃ while dielectric loss decreased rapidly, and they both changed little when it was higher than 60 ℃, which may be explained by the phenomenon of space charge polarization at the interface. In addition, frequency-dispersion effect was observed.

关 键 词：SIC 边界层电容器 介电常数 介质损耗 

分 类 号：TM534.1[电气工程—电器]