窄禁带半导体材料中共振缺陷态测量  

MEASUREMENT OF RESONANT DEFECT STATES IN NARROW GAP SEMICONDUCTORS

作　　者：吴良津[1] 刘坤[2] 褚君浩[2] 

机构地区：[1]福州大学电子科学与应用物理系 [2]中国科学院上海技术物理研究所红外物理国家重点实验室

出　　处：《物理学报》1997年第5期964-968,共5页Acta Physica Sinica

摘　　要：运用量子电容谱测量技术，在窄禁带半导体材料ＩｎＳｂ和ＨｇＣｄＴｅ价带和导带中分别发现了两个共振缺陷态．By using a newly developed measuring technique,i.e. the quantum capacitance spectroscopy,resonant defect states were observed in the valence band and the conduction band of narrow gap semiconductor InSb and HgCdTe materials. On the basis of a developed experimental model,the properties of the resonant defect states are investigated.

关 键 词：半导体 窄禁带 价带 导带 共振缺陷态 

分 类 号：O471.5[理学—半导体物理]