硅压阻式压力传感器温度补偿建模与算法研究  

Study on Modeling and Arithmetic for Temperature Compensation of Si Piezoresistive Sensor

作　　者：孙凤玲[1] 于海超[1] 王金文[1] 方建雷[1] 杨永刚[1] 

机构地区：[1]中国电子科技集团公司第四十九研究所,哈尔滨150001

出　　处：《微纳电子技术》2007年第7期48-50,共3页Micronanoelectronic Technology

摘　　要：微电子技术的发展促进了硅传感器的加工工艺水平的提高,使硅传感器获得良好的一致性、稳定性和可靠性,而半导体的温度特性使硅压力传感器的零点和灵敏度随温度而发生漂移。针对硅压阻式压力传感器这一"弱点",介绍一种基于压力芯片的惠斯顿电桥建立外接电阻补偿网络的数学模型,利用MatLab优化工具箱提供的优化方法构建算法,对补偿电阻求解,实现对温度漂移的补偿。该方法更有助于基于硅压阻式压力芯片的OEM型产品的大规模量产。The developing of microelectronic technique improves processing technic of Si sensor, the sensor provids excellent uniformization, stabilization, reliability, and so on. The temperature property of semiconductor makes zero and sensitivity of Si piezoresistive sensor drifts with temperature. Aimming at the weakness, mathematic model based on external resistance compensation network for Wheatstone bridge of pressure chip was introduced. Solution procedure of compensating resistance was achieved using MatLab＇s optimizer. The method promotes manufacture of OEM production based on Si piezoresistive sensor chips.

关 键 词：硅压阻式压力传感器 漂移 惠斯顿电桥 补偿 优化 

分 类 号：TP212.1[自动化与计算机技术—检测技术与自动化装置]