磁控溅射法制备WO_3薄膜及其氢敏特性研究  

Hydrogen Gas Sensing Characteristics of WO_3 Thin Film Prepared by Magnetron Sputtering

作　　者：胡明[1] 冯有才[1] 尹英哲[1] 陈鹏[1] 

机构地区：[1]天津大学电子信息工程学院,天津300072

出　　处：《微纳电子技术》2007年第7期102-104,共3页Micronanoelectronic Technology

摘　　要：采用直流反应磁控溅射法,在未抛光的Al2O3基片上制备WO3薄膜,在干燥空气中经过热处理;利用SEM观察薄膜表面形貌;通过XRD测量,对薄膜的晶体结构进行分析;薄膜氢敏特性测试采用静态配气法。经过400℃热处理,当工作温度在270℃时,对体积分数为3×10-4%H2的灵敏度达到了77,稳定性较高、选择性好、响应时间在15s以内。WO3薄膜是一种较理想的氢敏材料,在氢敏传感器的设计中必定会得到足够的重视和广泛应用。WO3 thin film gas sensors were prepared by DC reactive magnetron sputtering on unpolished alumina substrate and annealed at dry air. The film morphology and crystalline phase were characterized through SEM, XRD analysis. In order to measure H2 gas sensitivity of WO3 thin films, a sealed test box was used. A sample was installed in test box and test gas was precisely inserted using an injector. Annealing temperature is 400 ℃ and operating temperature is 270 ℃, the hydrogen sensitivity of thin film to the volume fraction for 3 × 10^-4 % hydrogen is highest, reaching to 77, and the response time is very quick, in 15 s. Owing to the high sensitivi- ty and quick response time, as well as the lower operating temperature of WO3 thin film to the hydrogen, surely WO3 Thin film can obtain the enough value and the widespread application in the hydrogen sensitive sensor design.

关 键 词：磁控溅射 WO3 氢敏传感器 灵敏度 

分 类 号：TP212.2[自动化与计算机技术—检测技术与自动化装置]