GaAlAs/GaAs量子阱结构的实验研究  

Experimental Study of GaAlAs/GaAs Quantum Well Structure

作　　者：李学千[1] 曲轶[1] 宋晓伟 张千勇 张兴德 

机构地区：[1]长春光学精密机械学院高功率半导体激光国家重点实验室

出　　处：《光学学报》1997年第2期146-149,共4页Acta Optica Sinica

摘　　要：利用分子束外延生长法生长出了ＧａＡｌＡｓ／ＧａＡｓ梯度折射率分别限制单量子阱结构材料。对样品进行了光荧光谱、双晶Ｘ射线衍射和电化学电容－电压分布测量。实验结果表明，样品质量达到了设计要求。The GaAlAs/GaAs material with gradient refraction index separate confinement single quantum well structure has been grown by MBE method. PL spectrum, double crystal X ray diffraction and electrochemical CV profile in the sampls have been measured. The experimental results show that sample′s quality has reached requirement of design. Manufacture of laser diodes with the material has obtained preliminary result.

关 键 词：量子阱结构 砷铝镓 激光器 参数测试 

分 类 号：TN304.26[电子电信—物理电子学] O471.1[理学—半导体物理]