SU-8胶深紫外光刻模拟  

Simulation of SU-8 Photoresist Profile in Deep UV Lithography

作　　者：冯明[1] 黄庆安[1] 李伟华[1] 周再发[1] 朱真[1] 

机构地区：[1]东南大学MEMS教育部重点实验室,南京210096

出　　处：《Journal of Semiconductors》2007年第9期1465-1470,共6页半导体学报（英文版）

基　　金：国家自然科学基金资助项目(批准号:50325519)~~

摘　　要：综合了SU-8胶光刻过程中衍射、反射、折射、吸收率随光刻胶深度的变化及交联显影等各种效应,考虑了折射及吸收系数随时间的变化,建立了SU-8化学放大胶的光刻模型.模拟结果显示,该模型比现有的模拟方法结果更精确,与实验结果符合较好,可以在实际应用中对SU-8光刻胶的二维模拟结果进行有效预测.A new simulation method is proposed which considers diffraction,reflection, refraction,energy loss,absorption coefficient change,post-bake,and development. Compared with previous simulation methods,the present results show good agreement with experimental results. This shows that the simulation accuracy is increased. It is useful for the research of SU-8 phoptoresist deep UV lithography processes and micro-electro-mechanical system design.

关 键 词：SU-8胶 光刻模拟 显影轮廓 

分 类 号：TN305.7[电子电信—物理电子学]