硅基HgCdTe光伏器件的暗电流特性分析  

Characterization Analysis of Dark Current in HgCdTe/Si Photodiodes

作　　者：岳婷婷[1] 殷菲[1] 胡晓宁[1] 

机构地区：[1]中国科学院上海技术物理研究所

出　　处：《激光与红外》2007年第B09期931-934,共4页Laser & Infrared

摘　　要：对硅基HgCdTe中波器件进行了变温电流电压特性的测试和分析。测量温度从30K到240K,得到R0对数与温度的1000/T的实验曲线及拟合结果。同时选取60K、80K及110K下动态阻抗R与电压V的曲线进行拟合分析。研究表明在我们器件工作的温度点80K,零偏压附近主要的电流机制是产生复合电流和陷阱辅助隧穿电流。要提高器件的水平,必须降低陷阱辅助隧穿电流和产生复合电流对暗电流的贡献。The current-voltage characteristics via temperature of mid-wavelength HgCdTe/Si photodiodes were measured and analyzed. The temperature range was from 30K to 240K, and the characteristic of R0-1000/T was measured and analyzed. The R-V curve of 60K, 80K and 110K were modeled using different dark current mechanisms. The theoretical fitting of experimental data at 80K reveals the generation-recombination and trap-assisted tunneling current dominates for zero- and low-bias region. Reduction of generation-recombination and trap-assisted tunneling currents by selecting proper material and device technologies will improve our device performance.

关 键 词：硅基 HGCDTE 变温 暗电流 

分 类 号：TN215[电子电信—物理电子学]