气氛掺氮直拉硅单晶中氮关施主的光热电离光谱研究  

Study of Photothermal Ionization Spectroscopy of Nitrogen Related Donors in Czochralski Silicon Under Nitrogen Atmosphere

作　　者：张溪文[1] 阙端麟[1] 石晓红[2] 沈学础[2] 

机构地区：[1]浙江大学硅材料国家实验室,杭州310027 [2]中国科学院上海技术物理所红外物理国家实验室,上海200083

出　　处：《Journal of Semiconductors》1997年第5期337-343,共7页半导体学报（英文版）

摘　　要：以光热电离光谱方法指证了减压充氮气氛下生长的微氮直拉硅单晶中的氮关浅施主NRD（NitrogenRelatedDonor）．确认NRD的形成温区为300～800℃，900℃以上退火将被不可逆消除．指出NRD可能有N－O复合体和氧凝聚态浅施主两种形式，各有不同的热处理行为．:PTIS method is taken to indicate the presence of nitrogen related donor(NRD)in nitrogen doped CZ-Si grown under high purity nitrogen atmosphere at reduced pressure.It is confirmed that NRD are generated between 300～800℃, and can be unreversibely annihilated under 900℃ heat-treament. N-O complex and oxygen agglomeration may be two origins of NRD, each has different heat treatment behavior.

关 键 词：气氛掺氮 硅单晶 氮关施主 施主 光热电离光谱 

分 类 号：TN304.12[电子电信—物理电子学]