连续波电光检测法用于检测超薄层异质结外延材料均匀性的研究  

Research on Growth Uniformity of Ultrathin Heterojunction Epitaxial Wafer Materials Using CW Electro-optic Probing Technique

作　　者：苏小元[1] 朱祖华[2] 

机构地区：[1]苏州大学工学院电子系,苏州215006 [2]浙江大学信息与电子工程系,杭州310027

出　　处：《Journal of Semiconductors》1997年第5期350-355,共6页半导体学报（英文版）

基　　金：国家自然科学基金

摘　　要：本文以连续波电光检测法（CWEOP）为基本原理，设计完成了自动电光检测系统，并采用锁相放大技术，对超薄层异质结外延材料进行了电场分布的测试，由此对其均匀性进行了评估．通过实验探讨了超薄层异质结外延材料2DEG分布不均匀的电光检测标准、最佳测试条件等，并对影响测量结果的因素进行了分析．本方法的突出优点是能够无损地对超薄层异质结外延材料不均匀的2DEG进行定位．As one of the High Electronic Mobility Transister materials, ultrathin heterojunction epitaxial wafer is in plenty of use. The CW electro-optic probing (CWEOP) technique used to evaluate the quality of material growth, is very favorite for scientific researchers because of its non-damage, high-resoluation and other superior qualities. With the self-made automatic opto-electronic probing system and lock-in amplifier technique,the auther has detected the electronic distribution of some ultrathin heterojunction materials and investigated the characteristics of the materials. The results of experiments indicate that the distribution of electric field of the material is related to that of it's two-dimentional electron gas (2DEG), this detection system can locate the non-linar 2DEG distribution zone of the materials. It shows that the CWEOP is a reliable method for investigation of characteristics of ultrathin heterojuntion wafer materials.

关 键 词：分子束外延 连续波电光检测 异质结 外延材料 

分 类 号：TN304.054[电子电信—物理电子学]