MOVPE生长GaN的准热大学模型及其相图  

Thermodynamic Modeling and Phase Diagram for the MOVPE Growth of GaN

作　　者：段树坤[1] 陆大成[2] 

机构地区：[1]集成光电子国家重点实验室 [2]半导体材料科学实验室

出　　处：《Journal of Semiconductors》1997年第5期385-390,共6页半导体学报（英文版）

基　　金：中国国家科学技术委员会和美国惠普公司"合作开展高技术研究协议"项目

摘　　要：本文基于准热力学平衡模型对以TMGa和NH3为源的MOVPE生长GaN的过程进行了分析，并在此基础上计算了MOVPE生长GaN的相图．GaN的MOVPE相图由GaN（s）单凝聚相区、GaN（s）＋Ga（1）双凝聚相区、表面会形成Ga滴和不会形成Ga滴的两个腐蚀区构成．本文着重讨论了生长温度、反应室压力、载气组分、NH3分解率和V／Ⅲ比对GaN单凝聚相区边界的影响．A thermodynamic analysis based on quize-thermodynamic equilibrium to be established at the solid-vapor interface of GaN grown by MOVPE has been phase proposed.Phase diagrams for MOVPE growth of GaN using TMGa and NH3 have also been proposed. The phase diagram is divided into four phases regions: the region for single condensed phase of GaN, the region for double condensed phase of GaN (s) +Ga (1), the etching region with Ga droplets and the etching region without Ga droplets. The effect of growth temperature, reactor pressure, content of mixture carrier gas, decomposition ratio of NH3 and V/Ⅲ ratio on the MOVPE growth of GaN has been studied.

关 键 词：MOVPE生长 氮化镓 准热力学 模型 相图 

分 类 号：TN304.054[电子电信—物理电子学]