加热去氩处理工艺对离子束混合沉积的C-SiC涂层阻氢性能的影响  

Effect of Eliminating Argon by Heat-Treatment on Hydrogen Resistance of C-SiC Films Deposited by Ion Beam Mixing

作　　者：任丁[1] 张瑞谦[1] 黄宁康[1] 曾俊辉[2] 杜良[2] 张东[2] 

机构地区：[1]四川大学原子核科学技术研究所教育部辐射物理和技术重点实验室,四川成都610064 [2]中国工程物理研究院核物理与化学研究所,四川绵阳621900

出　　处：《原子能科学技术》2007年第5期586-590,共5页Atomic Energy Science and Technology

基　　金：国家自然科学基金资助项目(59781002);中国工程物理研究院基金资助项目;四川大学协作项目

摘　　要：利用Ar^+离子束混合技术在不锈钢基体上沉积C-SiC涂层,然后对部分样品进行加热去氩处理(400℃,30min),再用5keV氢离子源辐照样品。通过扫描电镜(SEM)的表面形貌观察、二次离子质谱仪(SIMS)的H与Ar元素深度分布和正离子质谱分析,研究去氩处理对氢离子辐照的C-SiC涂层的形貌和阻氢性能的影响。结果表明,经去氩处理,样品中不锈钢基体内的氢浓度降低了80%,显示出去氩处理的C-SiC涂层具有更高的阻氢性能。研究结果将为该技术应用于不锈钢基体上C-SiC涂层制备工艺的进一步改善提供依据。C-SiC films were deposited on the surface of stainless steel using ion beam mixing. In order to eliminate argon, some of the samples were heat-treated for 30 min at 400 ℃ before all were irradiated by 5 keV hydrogen ion beam. Scanning electron microscope （SEM） was used to analyze surface microtopology. Secondary ion mass spectrometry （SIMS） was used to analyze the depth distribution of H and Ar and mass spectra of positive species. The effect of eliminating argon by heat-treatment on the surface structure and hydrogen resistance of C-SiC films was studied, It is found that the concentration of hydrogen in stainless steel substrates after eliminated argon by heat-treatment is reduced 80%. This means that the technical of eliminating argon by heat-treatment can effectively improve hydrogen resistance of C-SiC films, which offers the theory proof of technical improvement in practical application.

关 键 词：C-SiC涂层 离子束混合沉积 阻氢 扫描电镜 二次离子质谱 

分 类 号：TL93[核科学技术—辐射防护及环境保护]