AlN基片金属化Ag-Pd厚膜导体研究  

Study of Ag Pd Thick Film Conductor for AlN Substrate Metallization

作　　者：田民波[1] 何卫[1] 李恒德[1] 

机构地区：[1]清华大学材料科学与工程系

出　　处：《功能材料》1997年第4期358-362,共5页Journal of Functional Materials

基　　金：国家自然科学基金

摘　　要：在ＡｌＮ基片上采用Ａｇ－２０％Ｐｄ浆料实现了厚膜金属化布线。膜层的附着力、表面电阻、可焊性及耐焊料的腐蚀能力都不亚于Ａｌ２Ｏ３基片上的情况。在烧结过程中，熔化的玻璃料向基片表面流动富集，而导体粉料变成网状结构。结果，界面附近的玻璃与导体层之间形成“交联”结构，而与基极之间形成“镶嵌”结构。为了获得这种附着性能良好的界面结构，玻璃料应具有５００～６００℃合适的软化点，且能润湿金属及ＡｌＮ基片。The Ag 20%Pd thick film metallization conductors on AlN substrate were studied. The conductor films on AlN substrate have performances almost as good as on Al 2O 3 substrate with regard to adhesion strength,reliability,sheet resistivity,soldering wettability and erosion resistance. During sintering,the glassy frit melts and flows towards the substrate,while the Ag Pd powder sinters together to form a mesh structures. As a result,an intricated interlock structure between Ag Pd conductor layer and glass, and an inlay structure between glass and AlN substrate were formed. In order to achieve this microstructure at the conductor substrate interface,it is necessary that the glass has a proper softening point ( about 500～600℃) and is able to wet the metals and the AlN substrate.

关 键 词：氮化铝 基片 Ag-Pd 界面 基片 厚膜 金属化布线 

分 类 号：TN603[电子电信—电路与系统]