PT/PZT/PT薄膜微力传感器  

Microforce sensors based on PT/PZT/PT thin films

作　　者：崔岩[1] 孟汉柏[2] 王兢[3] 石二磊[2] 王立鼎[2] 

机构地区：[1]大连理工大学精密与特种加工教育部重点实验室,辽宁大连116023 [2]大连理工大学微纳米技术及系统辽宁省重点实验室,辽宁大连116023 [3]大连理工大学电子与信息工程学院,辽宁大连116023

出　　处：《光学精密工程》2007年第9期1404-1409,共6页Optics and Precision Engineering

基　　金：国家自然科学基金资助项目(No.9020700390607002)

摘　　要：提出了一种基于PT/PZT/PT压电薄膜微悬臂梁结构的微力传感器。运用Sol-Gel(溶胶-凝胶)法制作了PT和PZT薄膜,采用X射线衍射技术表征了PZT和PT/PZT/PT两种薄膜的成相特征,用阻抗分析仪测试了PZT和PT/PZT/PT薄膜的介电常数。结果表明,在PZT薄膜退火温度同为600℃时,PZT和PT/PZT/PT薄膜均为完整的钙钛矿结构,而且PT/PZT/PT薄膜沿(100)晶向强烈取向;在测试频率为1 kHz时,经600℃热处理条件下制备的PZT和PT/PZT/PT薄膜的相对介电常数分别为525和981。最后应用MEMS工艺制作了基于PT/PZT/PT压电薄膜微悬臂梁结构的微力传感器。在静态和准静态下对微力传感器的传感特性进行了测试。测试结果表明,力与位移或电荷具有良好的线性关系。两种尺寸微力传感器的灵敏度分别为0.045 mV/μN和0.007 mV/μN,力分辨率分别为3.7μN和16.9μN,满足了微牛顿量级微小力的测量。A novel microforce sensor with microcantilever structure based on PT/PZT/PT piezoelectric thin films is proposed. The PT and PZT thin films are fabricated using Sol-Gel method. The PZT thin film and the PT/PZT/PT thin film are investigated using X-ray diffractometry. The measured dielectric constants of the thin films show that both thin films have pure perovskite tetragonal structure and the PT/PZT/PT thin film orients in pervoskite （100） strongly at the same anneal temperature of 600℃. The dielectric constants of the PZT thin film and the PT/PZT/PT thin film are 525 and 981 at 1 kHz, respectively. Finally, the microforce sensors are fabricated using MEMS techniques and the sensing properties of microforce sensor are measured in static state and quasi-static state. The results show that it has good linearity between force and deflection or charge. The sensitivities of two kinds of size microforce sensors are 0. 045 mV/μN and 0. 007 mV/μN in quasi-static state with resolution of 3.7μN and 16.9μN, respectively. The measurement of microforce can satisfy the need of micro-New- ton level.

关 键 词：PT/PZT/PT薄膜 微悬臂梁 微力传感器 

分 类 号：TN384[电子电信—物理电子学] TP212.12[自动化与计算机技术—检测技术与自动化装置]