氧气氛退火对磁控溅射Ta_2O_5薄膜结构、表面形貌及电学性能的影响  

Influence of Annealing in O_2 Atmosphere on Structure,Surface Morphology and Electrical Properties of Tantalum Pentoxide Film Formed by Reactive-Magnetron Sputtering

作　　者：马志伟[1] 米仪琳[1] 张铭[1] 王波[1] 严辉[1] 

机构地区：[1]北京工业大学薄膜材料实验室,北京100022

出　　处：《北方工业大学学报》2007年第3期58-61,共4页Journal of North China University of Technology

摘　　要：本文采用磁控溅射在Si基体上制备Ta2O5薄膜,研究了退火前、500℃氧气氛退火半小时之后、800℃氧气氛退火半小时之后的Ta2O5薄膜的结构、表面形貌及电学性能.退火前和500℃退火的薄膜均为非晶薄膜,但500℃退火之后能使非晶薄膜结构更加致密,表面更加平整,并且给薄膜进行了补氧,提高了薄膜的绝缘性能.800℃退火之后的薄膜出现了结晶颗粒,晶界引起了大的漏电流,使薄膜的绝缘性能下降.The structure, surface morphology and electrical properties in Ta2O5 layers on silicon base with different annealing conditions, formed by magnetron sputtering have been investigated in this paper. Both the Ta2O5 film without annealing and the Ta2O5 film with annealing in O2 atmosphere at 500℃ for 0.5 h are amorphous, but the Ta205 film with annealing in O2 atmosphere at 500℃ not only makes the amorphous film more compact and less rough, but also makes the surface richer in oxygen, thus insulation is improved. The Ta205 film with annealing in 02 at 800℃ for 0. 5 h has crystalline grain. The grain boundary results in large current leakage, and poorer insulation.

关 键 词：磁控溅射 TA2O5 结构 表面形貌 电学性能 退火 

分 类 号：TB43[一般工业技术]